Local vibrational modes of the oxygen trimer in Si
Local vibrational modes of the oxygen trimer in Si
复制标题
Si 中氧三聚体的局部振动模式
DOI：
10.1002/pssc.201000280
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Murin L
中科院分区：
文献类型：
--
作者：
Murin L
在目前的工作中，我们已经利用了不同种类的缺陷工程（氢化，在高温下的辐照等），以提高小的氧簇的形成在硅晶体生长的直拉技术。通过这些方式，我们设法显著增加了缺陷的浓度，从而在1006 cm-1处产生了局域振动模式（LVM）带。在首先用空位-三氧复合物（VO 3）富集然后电子辐照的样品中实现了最高浓度的缺陷。结果表明，辐照诱导的Si自发光体与VO 3发生相互作用，形成了含有三个间隙氧原子的复合物.所得结果为1006 cm-1谱带归属于氧三聚体提供了强有力的支持。发现位于537、723和1020 cm-1处的三个LVM带以与1006 cm-1带相似的方式形成，并且它们都被认为是由三聚体产生的。（© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
In the present work we have exploited different kinds of defect engineering (hydrogenation, irradiations at elevated temperatures etc) to enhance the formation of small oxygen clusters in Si crystals grown by the Czochralski technique. In these ways we manage to increase significantly the concentration of a defect giving rise to a local vibrational mode (LVM) band at 1006 cm‐1. The highest concentration of the defect is achieved in samples first enriched with the vacancy‐trioxygen complex (VO3) and then electron irradiated. It is found that an interaction of the radiation‐induced Si self‐interstitials with VO3occurs, so resulting in the appearance of a complex incorporating three interstitial oxygen atoms. The results obtained give strong support for the assignment of the 1006 cm‐1band to the oxygen trimer. Three LVM bands positioned at 537, 723 and 1020 cm‐1are found to develop in a similar way to the 1006 cm‐1band and all of them are suggested to arise from the trimer. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)