PSEUDOMORPHIC INYGA1-YAS/GAAS/ALXGA1-XAS SINGLE QUANTUM WELL SURFACE-EMITTING LASERS WITH INTEGRATED 45 BEAM DEFLECTORS
PSEUDOMORPHIC INYGA1-YAS/GAAS/ALXGA1-XAS SINGLE QUANTUM WELL SURFACE-EMITTING LASERS WITH INTEGRATED 45 BEAM DEFLECTORS
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具有集成 45 个光束偏转器的赝态 INYGA1-YAS/GAAS/ALXGA1-XAS 单量子阱表面发射激光器
DOI：
10.1063/1.104451
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发表时间：
1991
影响因子：
4
通讯作者：
Luke P. Lee
中科院分区：
文献类型：
--
作者：
Jaehoon Kim;A. Larsson;Luke P. Lee
我们报告了赝晶 InGaAs 单量子阱表面发射激光器 (SEL) 的首次演示，该激光器具有蚀刻垂直镜和通过离子束蚀刻制造的集成 45° 光束偏转器。 100μm宽的大面积SEL的阈值电流为320mA，总功率为126mW，500μm长腔的总外部微分量子效率为0.09W/A。大面积 SEL 的垂直远场图显示半峰全宽约为 20°。对由同一晶圆制造的具有各种类型腔的激光器进行了比较。大面积边发射激光器的阈值电流为200 mA，总功率为700 mW，总外微分量子效率为0.52 W/A。
We report on the first demonstration of pseudomorphic InGaAs single quantum well surface‐emitting lasers (SELs), with etched vertical mirrors and integrated 45° beam deflectors fabricated by ion beam etching. 100‐μm‐wide broad‐area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500‐μm‐long cavity. The perpendicular far‐field pattern of broad‐area SELs showed a full width at half maximum of ∼20°. The lasers with various types of cavities fabricated from the same wafer were compared. Broad‐area edge‐emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.