Preparation of VO2/graphene/SiC film by water vapor oxidation
Preparation of VO2/graphene/SiC film by water vapor oxidation
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DOI：
10.1515/rams-2023-0338
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发表时间：
2023-01
影响因子：
3.6
通讯作者：
Wenwen Xu;Shanguang Zhao;Liang Li;Lele Fan;Jian Yuan;Yumeng Zhang;Bing Li;Zhongliang Liu
中科院分区：
文献类型：
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作者：
Wenwen Xu;Shanguang Zhao;Liang Li;Lele Fan;Jian Yuan;Yumeng Zhang;Bing Li;Zhongliang Liu
摘要二氧化钒（VO 2）由于其特殊的金属-绝缘体相变特性和广泛的器件应用而引起人们的广泛关注。VO 2基器件的实际性能在很大程度上取决于VO 2的质量，因为高质量的VO 2薄膜总是表现出更显著的相变行为。因此，制备高质量的VO 2薄膜是非常必要和迫切需要的。本文采用水蒸气氧化法在SiC衬底上制备了高质量的VO 2薄膜，并以石墨烯（G）为缓冲层，该薄膜具有良好的相变特性。与未加G缓冲层的VO 2/SiC样品相比，VO 2/G/SiC薄膜在相变边界处的电阻变化高达4个数量级，具有上级光电性能，表明G层在薄膜生长过程中的重要作用。本研究不仅为制备高质量的VO 2/G/SiC薄膜提供了一种经济可行的方法，而且为今后G基VO 2器件的应用提供了一些线索。
Abstract Vanadium dioxide (VO2) has attracted extensive attention due to the specific metal-insulator phase transition as well as the wide device applications. The practical performance of VO2-based device strongly depends on the quality of VO2, since the higher quality of VO2 film always shows much more pronounced phase transition behavior. Thus, the preparation of high quality VO2 film is essential and highly desirable. In this work, we have prepared high-quality VO2 film on SiC substrate by water vapor oxidation with graphene (G) buffer layer, which showed excellent phase transformation properties. Compared with the VO2/SiC sample without G buffer layer, the VO2/G/SiC films show the resistance changes up to four-orders of magnitude across the phase transition boundary and superior optoelectronic properties, which indicates the significant role of G layer in the film growth process. The current study not only provides an economical and feasible method for VO2/G/SiC thin film preparation with high quality, but also supply some clues for the application of G-based VO2 devices in the future.