Contactless photoconductivity measurements on (Si) nanowires
Contactless photoconductivity measurements on (Si) nanowires
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(Si) 纳米线上的非接触式光电导测量
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
H. Bouchiat
中科院分区：
文献类型：
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作者：
A. Chepelianskii;F. Chiodi;M. Ferrier;S. Guéron;E. Rouvière;H. Bouchiat
导电纳米线具有块状材料所不具备的优异物理性能。然而，我们对它们的传输特性的了解由于难以将它们电连接而受到限制。在这封信中，我们使用工作在0.3-3 GHz频率的超导多模谐振器研究了体硅和硅纳米线中的光输运。我们发现，尽管体硅响应主要是耗散的，但纳米线表现出很大的介电极化率。这项技术是非接触式的，可以应用于其他半导体纳米线和分子。
Conducting nanowires possess remarkable physical properties unattainable in bulk materials. However our understanding of their transport properties is limited by the difficulty of connecting them electrically. In this letter we investigate phototransport in both bulk silicon and silicon nanowires using a superconducting multimode resonator operating at frequencies between 0.3 and 3 GHz. We find that whereas the bulk Si response is mainly dissipative, the nanowires exhibit a large dielectric polarizability. This technique is contactless and can be applied to other semiconducting nanowires and molecules.