MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection
MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection
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DOI：
10.1016/j.jcrysgro.2004.09.088
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发表时间：
2005-01-15
影响因子：
1.8
通讯作者：
Joullié, A
中科院分区：
文献类型：
--
作者：
Rodriguez, JB;Christol, P;Joullié, A
用固体源分子束外延技术在GaSb衬底上生长了由10个InAs单层(MLS)和10个GaSb单层(MLS)组成的II型InAs/GaSb超晶格(SLS)，截止波长为5.4um。为了获得晶格匹配的结构，在InAs界面的GaSb处插入了一层很薄的InSb。我们证明了这种结构的结构和光学性质强烈地依赖于InSb插入层的厚度。在优化MBE快门顺序后，通过使用390℃的生长温度和插入厚度为1ML的InSb层，可以生长应变平衡的InAs/GaSb SLS。使用100个周期的这种SL作为吸收材料的未经优化的PIN二极管在室温下在3-5 PM的中红外波长区域的吸收系数从4 x 10(3)到6 x 10(3)cm(-1)变化，并且光伏响应高达230 K(C)2004 Elsevier B.V.。
Type-II InAs/GaSb superlattices (SLs) made of 10 InAs monolayers (MLs) and 10 GaSb MLs, designed to have a cut-off wavelength of 5.4 mum, have been grown on GaSb substrates by solid source molecular beam epitaxy (M BE). In order to obtain lattice-matched structures, a thin layer of InSb was inserted at the GaSb on InAs interface. We demonstrate that structural and optical properties of such structures strongly depend on the thickness of the InSb inserted layer. Strain-balanced InAs/GaSb SLs could be grown, after optimizing the MBE shutter sequence, by using a growth temperature of 390degreesC and an inserted InSb layer of thickness I ML. Non-optimized pin diodes using 100 periods of such an SL as absorbing material showed an absorption coefficient varying from 4 x 10(3) to 6 x 10(3) cm(-1) at room temperature in the 3-5 pm mid-infrared wavelength region, and a photovoltaic response up to 230 K. (C) 2004 Elsevier B.V. All rights reserved.