Temperature dependence of carrier spin polarization determined from current-induced domain wall motion in a Co/Ni nanowire
Temperature dependence of carrier spin polarization determined from current-induced domain wall motion in a Co/Ni nanowire
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DOI：
10.1063/1.4718599
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发表时间：
2012-05
影响因子：
4
通讯作者：
K. Ueda;T. Koyama;R. Hiramatsu;D. Chiba;S. Fukami;H. Tanigawa;Tetsuhiro Suzuki;N. Ohshima;N. Ishiwata;Y. Nakatani;K. Kobayashi;T. Ono
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文献类型：
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作者：
K. Ueda;T. Koyama;R. Hiramatsu;D. Chiba;S. Fukami;H. Tanigawa;Tetsuhiro Suzuki;N. Ohshima;N. Ishiwata;Y. Nakatani;K. Kobayashi;T. Ono
我们研究了垂直磁化Co/Ni纳米线在不同温度和不同外加电流下电流感应磁畴壁（DW）运动的温度依赖性。根据测量的畴壁速度估计载流子自旋极化。从100 K到530 K，随着温度的升高，磁化强度的减小幅度大于饱和磁化强度。
We have investigated the temperature dependence of the current-induced magnetic domain wall (DW) motion in a perpendicularly magnetized Co/Ni nanowire at various temperatures and with various applied currents. The carrier spin polarization was estimated from the measured domain wall velocity. We found that it decreased more with increasing temperature from 100 K to 530 K than the saturation magnetization did.