Inelastic tunneling spectra of MgO barrier magnetic tunneling junctions showing large magnon contribution
Inelastic tunneling spectra of MgO barrier magnetic tunneling junctions showing large magnon contribution
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DOI：
10.1063/1.3063674
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发表时间：
2009-03
影响因子：
3.2
通讯作者：
Do Bang;T. Nozaki;D. Djayaprawira;M. Shiraishi;Yoshikazu Suzuki;A. Fukushima;H. Kubota;T. Nagahama;S. Yuasa;H. Maehara;K. Tsunekawa;Y. Nagamine;N. Watanabe;H. Itoh
中科院分区：
文献类型：
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作者：
Do Bang;T. Nozaki;D. Djayaprawira;M. Shiraishi;Yoshikazu Suzuki;A. Fukushima;H. Kubota;T. Nagahama;S. Yuasa;H. Maehara;K. Tsunekawa;Y. Nagamine;N. Watanabe;H. Itoh
研究了不同铁磁电极下MgO基磁性隧道结中磁振子贡献的电导率随偏压和温度的变化关系。二阶导数电导曲线显示宽峰结构，其从5 mV延伸至200 mV，伴随着在约23、54和85 mV处的额外峰。反平行构型的峰强度大于平行构型的峰强度，但在85 mV处除外。对于具有较高隧穿磁阻比的MTJ，观察到峰强度的这种差异较大，表明这些峰的磁性起源。反平行结构中，在极低偏置电压下，二阶导数电导的突然增加表明表面磁振子激发的重要作用。
We investigated bias-voltage and temperature dependence of conductivity arising from the magnon contribution in MgO-based magnetic tunneling junctions (MTJs) with different ferromagnetic electrodes. Second derivative conductance curves showed broad peak structure, which extends from 5 to 200 mV, accompanied by additional peaks at around 23, 54, and 85 mV. The peak intensities were larger for antiparallel configuration than for parallel configuration except that at 85 mV. This difference in the peak intensity was observed to be larger for the MTJs having higher tunneling magnetoresistance ratio, indicating a magnetic origin of these peaks. Abrupt increase in the second derivative conductance at very low biasing voltage in the antiparallel configuration suggests the important role of the surface magnon excitation.