${C}_{\textsf{OSS}}$ Measurements for Superjunction MOSFETs: Limitations and Opportunities
${C}_{\textsf{OSS}}$ Measurements for Superjunction MOSFETs: Limitations and Opportunities
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DOI：
10.1109/ted.2018.2880952
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发表时间：
2019-01
影响因子：
3.1
通讯作者：
G. Zulauf;Jaume Roig-Guitart;J. Plummer;J. Rivas-Davila
中科院分区：
文献类型：
--
作者：
G. Zulauf;Jaume Roig-Guitart;J. Plummer;J. Rivas-Davila
输出电容的小信号测量(${C_{\Textsf{OSS}$)在功率半导体数据手册中无处不在，它决定了功率转换器的关键特性。对于硅超导功率MOSFET(SJS)，我们报告了两个重要的反常现象：随交流微扰频率的变化和随直流扫描方向的滞后。利用混合模式模拟，我们将频移归因于基本的SJ结构，并发现直流磁滞是由不均匀耗尽前沿的电荷陷阱引起的。我们发现，SJS上的${C_{\Textsf{OSS}}$测量不能准确地描述大信号操作，将存储能量低估了四倍，并且没有给出${C_{\Textsf{OSS}$损失的指示。
Small-signal measurements of output capacitance ( ${C_{\textsf {OSS}}}$ ) are ubiquitous in power semiconductor datasheets and determine critical features of power converters. For silicon superjunction power MOSFETs (SJs), we report ${C_{\textsf {OSS}}}$ measurements with two key anomalies: variation with ac perturbation frequency and hysteresis with dc sweep direction. Using mixed-mode simulations, we attribute the frequency shift to the fundamental SJ structure and find that dc hysteresis is caused by charge trapping from uneven depletion fronts. We show that ${C_{\textsf {OSS}}}$ measurements on SJs do not accurately characterize large-signal operation, underestimating stored energy by up to four times and giving no indication of ${C_{\textsf {OSS}}}$ losses.