Visualizing and Suppressing Nonradiative Losses in High Open-Circuit Voltage n-i-p-Type CsPbI3 Perovskite Solar Cells
Visualizing and Suppressing Nonradiative Losses in High Open-Circuit Voltage n-i-p-Type CsPbI3 Perovskite Solar Cells
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DOI：
10.1021/acsenergylett.9b02604
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发表时间：
2020-01-01
影响因子：
22
通讯作者：
Brabec, Christoph J.
中科院分区：
文献类型：
--
作者：
Meng, Wei;Hou, Yi;Brabec, Christoph J.
碘化铯铅（CsPbI3）由于其热稳定性和适合于串联太阳能电池的带隙，在光伏领域的应用越来越受到关注。然而，cspbi3基钙钛矿太阳能电池严重的非辐射复合损耗通常将其开路电压（V- oc）限制在0.9至1.1 V的范围内。本研究报告了一种利用光致发光（PL）技术可视化所有缺陷辅助重组途径的方法。通过氢氧化钡和氧化三辛基膦的底表面钝化，在微米尺度上获得了缺陷密度降低的可见和有价值的见解。双效应成功地将太阳能电池的V- oc从0.87提高到1.17 V。这些结果突出了高光谱PL成像作为一种强有力的工具的潜力，可以为进一步抑制全无机钙钛矿的非辐射V-OC损失提供指导。
Cesium lead iodide (CsPbI3) has attracted increasing attention for its photovoltaic applications, owing to its thermal stability and suitable band gap for tandem solar cells. However, the severe nonradiative recombination losses in CsPbI3-based perovskite solar cells generally restrict their open-circuit voltage (V-OC) to the range of 0.9 to 1.1 V. This work uniquely reports a method to visualize all defect-assisted recombination pathways with photoluminescence (PL) techniques. Visible and valuable insight into the reduction of defect densities on a micrometer scale was obtained by the bottom surface and bulk passivation with barium hydroxide and trioctylphosphine oxide. The dual effects successfully improve the V-OC of the solar cell from 0.87 to 1.17 V. These results highlight the potential of hyperspectral PL imaging as a powerful tool to give guidance to further suppress the nonradiative V-OC losses in all-inorganic perovskites.