DEPOSITION OF THERMALLY STABLE, LOW DIELECTRIC CONSTANT FLUOROCARBON/SIO2 COMPOSITE THIN FILM
DEPOSITION OF THERMALLY STABLE, LOW DIELECTRIC CONSTANT FLUOROCARBON/SIO2 COMPOSITE THIN FILM
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热稳定、低介电常数氟碳/SiO2复合薄膜的沉积
DOI：
10.1063/1.117672
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发表时间：
1996
影响因子：
4
通讯作者：
N. Park
中科院分区：
文献类型：
--
作者：
D. S. Kim;Y. H. Lee;N. Park
以六甲基二硅氧烷（HMDSO）和前氟苯（C6 F6）为单体源气体，氩气和氧气为载气，在双频电感耦合高密度等离子体反应器中制备了具有良好热稳定性和低介电常数的低介电氟碳/SiO2复合薄膜。傅里叶变换红外光谱测试表明，薄膜由SiO2和无定形全氟四氟乙烯组成，其含量可通过改变原料气配比来控制。膜的介电常数范围在2和4之间，取决于进料单体气体比率。例如，当单体气体比率[HMDSO/（HMDSO+ C6 F6）]为0.2时，膜的介电常数为1.25。这种复合膜在硅衬底上显示出良好的热稳定性和良好的粘附性。
Low dielectric fluorocarbon/SiO2 composite films are developed that exhibit good thermal stability and low dielectric constant by using hexamethyldisiloxane (HMDSO) and prefluorobenzene (C6F6) as the monomer source gases, and argon and oxygen as the carrier gases in a dual frequency, inductively‐coupled high‐density plasma reactor. Fourier transform infrared measurements of the films show that they consisted of both SiO2 and amorphous perfluoro tetra fluoroethylene, and the amount of each can be controlled by changing the feed monomer gas ratio. The dielectric constant of the film ranges between 2 and 4 depending on the feed monomer gas ratio. For example, when the monomer gas ratio [HMDSO/(HMDSO+C6F6)] is 0.2, the dielectric constant of the film is ∼2.5. Such a composite film shows good thermal stability and good adhesion on a silicon substrate.