Selective Area Epitaxy of GaAs Using GaAs Oxide as a Mask
Selective Area Epitaxy of GaAs Using GaAs Oxide as a Mask
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使用 GaAs 氧化物作为掩模的 GaAs 选择性区域外延
DOI：
10.1143/jjap.29.l1360
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
H. Hidaka
中科院分区：
文献类型：
--
作者：
Y. Hiratani;Y. Ohki;Y. Sugimoto;K. Akita;M. Taneya;H. Hidaka
采用金属有机分子束外延（MOMBE）技术，研究了氧化砷化镓作为掩膜材料在原位选择性区外延中的应用。采用电子束诱导的氯蚀刻法对氧化砷膜进行了图像化。以三甲基镓（TMG）和As4为源材料，在GaAs氧化物掩膜的开口处获得了一层外延层；GaAs氧化物表面未见沉积。用质谱法对TMG的热分解进行了观察，结果表明，在砷稳定表面，TMG在350°C以上发生了热分解，而在GaAs氧化物表面，在550°C以下不发生分解。这种表面催化反应解释了砷化镓生长的选择性。
The use of GaAs oxide as a mask material for in situ selective-area epitaxy of GaAs by metal organic molecular beam epitaxy (MOMBE) was studied. The GaAs oxide mask was patterned by electron-beam-induced chlorine etching. Using trimethylgallium (TMG) and As4 as source materials, an epitaxial layer of GaAs was obtained on the opening of the GaAs oxide mask; no deposition was observed on the GaAs oxide. An observation of the thermal decomposition of TMG by mass spectrometry indicated that the thermal decomposition of TMG occurred above 350°C on an arsenic-stabilized surface, while decomposition did not occur below 550°C on the GaAs oxide surface. This surface-catalyzed reaction explains the selectivity of GaAs growth.