Capacity of nanoscale metal/insulator/metal tunnel junctions by electronic charge screening at the surface of their electrodes
Capacity of nanoscale metal/insulator/metal tunnel junctions by electronic charge screening at the surface of their electrodes
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通过电极表面的电子电荷屏蔽来实现纳米级金属/绝缘体/金属隧道结的容量
DOI：
10.1063/1.3567116
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
A. Yazdani
中科院分区：
文献类型：
--
作者：
B. A. Ravan;A. Shokri;A. Yazdani
本文从理论上研究了Fe/MgO/Fe三层膜在两导体间存在直流耦合时的电容特性。讨论了纳米级金属/绝缘体/金属接触的电容主要取决于电极表面的电荷屏蔽。使用固定的自旋力矩计算的界面效应进行了模拟。为了有一个三层的平行和反平行对齐的能力之间的比较，它是假设跨结的电荷感应发生在两个独立的通道对应的向上和向下自旋电子。计算给出了一个较大的电容的电极的反平行排列，即使在没有任何外部施加的磁场的隧道结的稳定相计算是铁磁的。
A theoretical investigation on capacitive properties of Fe/MgO/Fe trilayers is presented where there is a dc coupling between the two conductors. It is discussed that capacities of the nanoscale metal/insulator/metal contacts are mainly determined by the electronic charge screening at surfaces of their electrodes. The interface effects are simulated using fixed spin moment calculations. In order to have a comparison between the capacities for the parallel and antiparallel alignments of the trilayer, it is assumed that the charge induction across the junction occurs in two independent channels corresponding to the up- and down-spin electrons. The calculations give a larger capacitance for the antiparallel alignment of the electrodes, even though the stable phase of the tunnel junction in the absence of any externally applied magnetic field is calculated to be ferromagnetic.