Hybrid Au-Adhesive Bonding Using Planar Adhesive Structure for 3-D LSI
Hybrid Au-Adhesive Bonding Using Planar Adhesive Structure for 3-D LSI
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DOI：
10.1109/tcpmt.2014.2311094
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发表时间：
2014-03
期刊：
影响因子：
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通讯作者：
Masatsugu Nimur;J. Mizuno;S. Shoji;K. Sakuma;H. Ogino;T. Enomoto;A. Shigetou
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文献类型：
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作者：
Masatsugu Nimur;J. Mizuno;S. Shoji;K. Sakuma;H. Ogino;T. Enomoto;A. Shigetou
在本文中，我们描述了一种混合键合技术的Au微凸点和粘合剂使用的平面粘合剂结构的3-D大规模集成电路（LSI）。混合键合意味着微凸点电极和粘合剂两者同时键合。在三维大规模集成电路中，由于微凸点间距减小，键合芯片间的间隙<10 μ m。传统上，粘合剂树脂通过毛细力注入到间隙中。然而，由于表面条件，间隙的填充不足。为了解决这一挑战，我们评估了混合键合与化学机械抛光制造的平面粘合剂结构。键合结果表明，Au凸点与填充在键合硅芯片之间6 μ m间隙中的粘合剂实现了连接，在6 mm × 6 mm范围内没有明显的空隙，所有900个凸点也实现了电连接。粘结样品的剪切强度为13 MPa。因此，我们确定，建议的混合键合技术是非常有效的3-D LSI与细间距微凸点。
In this paper, we describe a hybrid bonding technology of Au microbump and adhesive using a planar adhesive structure for 3-D large-scale integration (LSI). Hybrid bonding means that both the microbump electrode and adhesive are simultaneously bonded. In 3-D LSI, the gaps between bonded chips are <;10 μm because the pitch of the microbumps is decreased. Conventionally, adhesive resin is injected into the gaps by means of capillary force. However, the filling of the gaps is insufficient due to surface conditions. To address this challenge, we evaluated hybrid bonding with a planar adhesive structure fabricated by chemical-mechanical polishing. The bonding results showed that connection between the Au bumps and adhesive filling in the 6-μm gap between bonded Si chips was achieved without readily visible void in the range of 6 mm × 6 mm. All 900 bumps were also electrically connected. The shear strength of the bonded sample was 13 MPa. Therefore, we determined that the proposed hybrid bonding technology is highly effective for 3-D LSI with fine-pitch microbumps.