High-Precision Angle-Resolved Magnetometry with Uniaxial Quantum Centers in Silicon Carbide
High-Precision Angle-Resolved Magnetometry with Uniaxial Quantum Centers in Silicon Carbide
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DOI：
10.1103/physrevapplied.4.014009
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发表时间：
2015-07-20
影响因子：
4.6
通讯作者：
Dyakonov, V.
中科院分区：
文献类型：
--
作者：
Simin, D.;Fuchs, F.;Dyakonov, V.
我们表明，单轴色心在碳化硅与六方晶格结构，可以用来测量不仅是强度，但也极角的外部磁场相对于缺陷轴的高精度。该方法是基于在硅空位缺陷与四重基态的多个自旋共振的光学检测，并建议显着改善的角度灵敏度相比，自旋1色心。我们证明了实验和计算的自旋共振谱之间的良好协议，提供角度分辨率优于1度每赫兹（1/2）在亚毫特斯拉磁场。我们的方法适用于合奏以及单自旋3/2色心，允许在环境条件下的纳米尺度上的角度分辨磁强计。
We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high precision. The method is based on the optical detection of multiple spin resonances in the silicon vacancy defect with quadruplet ground state and suggests significant improvement of the angle sensitivity compared to spin-1 color centers. We demonstrate a good agreement between the experimental and calculated spin resonance spectra, providing angle resolution better than 1 degrees per Hz(1/2) in submillitesla magnetic fields. Our approach is suitable for ensemble as well as single spin-3/2 color centers, allowing for angle-resolved magnetometry on the nanoscale at ambient conditions.