Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode
Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode
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DOI：
10.1063/5.0002407
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发表时间：
2020-04-06
影响因子：
4
通讯作者：
Patane, A.
中科院分区：
文献类型：
--
作者：
Di Paola, D. M.;Lu, Q.;Patane, A.
中红外（MIR）光谱范围内的发光二极管（LED）需要在波长λ> 2 μ m处具有定制的光学吸收和发射的材料系统。在这里，我们报告了基于In（AsN）/（InAl）As共振隧穿二极管（RTD）的MIR LED。N原子导致在RTD的In（AsN）量子阱（QW）层中形成局部深能级。这对电致发光（EL）发射具有两个主要影响。通过将载流子电注入到N-相关能级中，在显著大于QW发射的波长（λ类似于3 μ m）下实现EL发射，将二极管的输出扩展到λ类似于5 μ m。此外，对于远低于二极管的平带条件的施加电压，在远大于由施加电压和/或热能提供的能量的能量下观察到EL发射，在室温下具有能量增益Δ E>0.2eV。我们把这种上转换发光归因于一个类似Auger的复合过程。
Light emitting diodes (LEDs) in the mid-infrared (MIR) spectral range require material systems with tailored optical absorption and emission at wavelengths lambda > 2 mu m. Here, we report on MIR LEDs based on In(AsN)/(InAl)As resonant tunneling diodes (RTDs). The N-atoms lead to the formation of localized deep levels in the In(AsN) quantum well (QW) layer of the RTD. This has two main effects on the electroluminescence (EL) emission. By electrical injection of carriers into the N-related levels, EL emission is achieved at wavelengths significantly larger than for the QW emission (lambda similar to 3 mu m), extending the output of the diode to lambda similar to 5 mu m. Furthermore, for applied voltages well below the flatband condition of the diode, EL emission is observed at energies much larger than those supplied by the applied voltage and/or thermal energy, with an energy gain Delta E>0.2eV at room temperature. We attribute this upconversion luminescence to an Auger-like recombination process.