Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si
Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si
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DOI：
10.1002/adma.201702557
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发表时间：
2017-10-11
影响因子：
29.4
通讯作者：
Dayeh, Shadi A.
中科院分区：
文献类型：
--
作者：
Tanaka, Atsunori;Choi, Woojin;Dayeh, Shadi A.
晶格失配材料的异质外延生长通过薄相干应变层的外延、虚拟和纳米级衬底中的应变共享以及具有中间应变松弛缓冲层的厚膜的生长而取得进展。然而，在高度失配的系统（例如硅基氮化镓）中，热失配并未完全解决。这里，利用几何效应和表面刻面来扩大硅上选择性生长的外延 GaN 层表面的热应力。展示了在硅上生长厚（19μm）、无裂纹的纯GaN层，并且迄今为止在硅基氮化镓中实现了1.1 x 10(7) cm(-2)的最低穿透位错密度。凭借这些进展，首款垂直 GaN 金属绝缘体半导体场效应晶体管在 Si 衬底上得到验证，具有低漏电流和高开/关比，为 Si CMOS 平台上经济高效的高功率器件范例铺平了道路
Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 mu m), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 x 10(7) cm(-2) achieved to date in GaN-on-Si is demonstrated. With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated