STEM‐CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi‐quantum wells
STEM‐CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi‐quantum wells
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堆垛层错对立方GaN外延层和立方GaN/AlN多量子阱光发射影响的STEM-CL研究
DOI：
10.1002/pssc.201400154
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
D. As
中科院分区：
文献类型：
--
作者：
R. M. Kemper;P. Veit;C. Mietze;Anja Dempewolf;T. Wecker;F. Bertram;J. Christen;J. Lindner;D. As
研究了{111}层错对立方GaN（c-GaN）薄膜和立方GaN/AlN多量子威尔斯阱阴极发光（CL）特性的影响。透射电子显微镜（TEM）测量表明，在3C-SiC/Si（001）衬底上用等离子体辅助分子束外延生长的外延薄膜中，{111}面上的层错（SF）是主要的晶体缺陷。的SF和发光输出的相关性证明与CL设置集成在扫描TEM（STEM）。通过比较STEM图像和同时测量的CL信号，证明这些薄膜中的SF导致CL发射强度降低。此外，CL发射强度被示出为增加膜厚度和减少SF密度。这种相关性可以连接到减少的全宽度在半最大值的X射线衍射摇摆曲线的c-GaN膜的膜厚度的增加。（© 2015 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
We report the influence of {111} stacking faults on the cathodoluminescence (CL) emission characteristics of cubic GaN (c-GaN) films and cubic GaN/AlN multi-quantum wells. Transmission electron microscopy (TEM) measurements indicate that stacking faults (SFs) on the {111} planes are the predominant crystallographic defects in epitaxial films, which were grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy. The correlation of the SFs and the luminescence output is evidenced with a CL setup integrated in a scanning TEM (STEM). By comparing the STEM images and the simultaneously measured CL signals it is demonstrated that SFs in these films lead to a reduced CL emission intensity. Furthermore, the CL emission intensity is shown to increase with increasing film thickness and decreasing SF density. This correlation can be connected to the reduction of the full width at half maximum of X-ray diffraction rocking curves with increasing film thickness of c-GaN films. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)