Very low turn-on voltage and high brightness tris-(8-hydroxyquinoline) aluminum-based organic light-emitting diodes with a MoOx p-doping layer
Very low turn-on voltage and high brightness tris-(8-hydroxyquinoline) aluminum-based organic light-emitting diodes with a MoOx p-doping layer
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DOI：
10.1063/1.2890490
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发表时间：
2008-03-03
影响因子：
4
通讯作者：
Zhao, Yi
中科院分区：
文献类型：
--
作者：
Xie, Guohua;Meng, Yanlong;Zhao, Yi
我们展示了一种基于氧化钼（MoOx）掺杂4,4('),4（”）-三（3-甲基苯基苯胺）三苯胺（m-MTDATA）作为p型掺杂孔注入层的有机发光二极管。三-（8-羟基喹啉）铝（Alq(3)）基有机发光二极管在非常低的工作电压下显示出很高的亮度，在3.2 V时为100 cd/m(2)，在4.4 V时为1000 cd/m(2)，对应于2.4 V的低导通电压。这种性能的改善是由于将MoOx掺杂到m-MTDATA中形成了电荷转移配合物，从而提供了更多的自由空穴载流子，以及引入了有效的电子注入层来提高性能。(c) 2008年美国物理研究所。
We have demonstrated an organic light-emitting diode based on molybdenum oxide (MoOx) doped 4,4('),4('')-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA) as a p-type doping hole injection layer. The tris-(8-hydroxyquinoline) aluminum (Alq(3))-based organic light-emitting diodes show high brightness at very low operating voltage, 100 cd/m(2) at 3.2 V and 1000 cd/m(2) at 4.4 V, corresponding to a low turn-on voltage of 2.4 V. Such improved properties are attributed to the formation of the charge transfer complex produced by doping MoOx into m-MTDATA, which provides much more free hole carriers, and the introduction of an efficient electron-injecting layer to improve the performance. (c) 2008 American Institute of Physics.