Development of High-Quality InP Single Crystals
Development of High-Quality InP Single Crystals
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DOI：
10.1146/annurev.ms.17.080187.000451
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发表时间：
1987-08
期刊：
影响因子：
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通讯作者：
M. Morioka;A. Tada;S. Akai
中科院分区：
文献类型：
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作者：
M. Morioka;A. Tada;S. Akai
导电和半绝缘衬底都强烈需要低位错密度的晶体（表 1）。用于1.55J.Lm波段光通信的GaInAsP半导体激光器和采用InP衬底的GaInAs雪崩光电二极管(APD)已经出现在市场上。为了实现光电集成电路（OEIC），半绝缘衬底晶体的开发已经开始。 OEle 将晶体管和光学器件集成在同一晶圆上。半绝缘晶圆被认为是最适合 OEle 的基板，因为其器件易于隔离。此外，由于InP的热阻很小（GaAs的三分之二），因此允许高功耗。如果将半绝缘InP晶片应用于晶体管，则可以制造金属绝缘体半导体场效应晶体管（MISFET）。衬底质量根据位错密度、纯度、均匀性和其他性能进行评估。重掺杂 S（n 型）或 Zn（p 型）至 1019 cm-3 水平的低位错密度导电基板（位错密度 <5 x 10 cm-2）可从多家公司购买。他们是
There is a strong need for crystals with low dislocation densities for both conductive and semi-insulating substrates (Table 1). GalnAsP semiconductor lasers for optical communication at 1.55 J.Lm band and GaInAs avalanche photodiodes (APDs) employing InP sub strates have appeared on the market. To realize an optoelectronic inte grated circuit (OEIC), the development of a semi-insulating substrate crystal has been started. An OEle has transistors and optical devices integrated on the same wafer. A semi-insulating wafer is considered to be the most suitable substrate for an OEle because of the easy isolation of its devices. Furthermore, as the thermal resistivity of InP is small (two thirds that of GaAs), high power dissipation is permissible. If semi-insu lating InP wafers are applied to transistors, the fabrication of a metal insulator semiconductor field-effect transistor (MISFET) is possible. The substrate quality is evaluated in terms of its dislocation density, purity, uniformity, and other properties. Low dislocation density conductive substrates (dislocation density <5 x 10 cm-2) heavily doped with S (n type) or Zn (p type) to a level of 1019 cm-3 are commercially available from several companies. They are