Lithographic graphitic memories.
Lithographic graphitic memories.
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DOI：
10.1021/nn9006225
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发表时间：
2009-08
期刊：
影响因子：
17.1
通讯作者：
A. Sinitskii;J. Tour
中科院分区：
文献类型：
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作者：
A. Sinitskii;J. Tour
这里报道的是基于石墨材料的化学气相沉积（CVD）纳米尺寸的不规则盘的条带的容易访问的存储器设备，所述石墨材料的纳米尺寸的不规则盘可以以95%的条带分层，被示出表现出电压诱导的切换行为，其可以用于两端存储器。这些存储器是稳定的，可编程的，和非易失性的ON/OFF比高达10（7），开关时间下降到1 μ s（测试极限），和开关电压下降到3-4 V。这些光刻存储器的主要功能参数示出可扩展的设备的尺寸。
Reported here are easily accessible memory devices based upon stripes of chemical vapor deposited (CVD) nanosized irregular discs of graphitic material that can be layered in stripes 95%, are shown to exhibit voltage-induced switching behavior, which can be used for two-terminal memories. These memories are stable, rewritable, and nonvolatile with ON/OFF ratios up to 10(7), switching times down to 1 mus (tested limit), and switching voltages down to 3-4 V. The major functional parameters of these lithographic memories are shown to be scalable with the devices' dimensions.