Growth, Mechanical and Thermal Properties of Bi4Si3O12 Single Crystals
Growth, Mechanical and Thermal Properties of Bi4Si3O12 Single Crystals
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Bi4Si3O12 单晶的生长、机械和热性能
DOI：
10.1088/0256-307x/29/7/076501
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发表时间：
2012
影响因子：
3.5
通讯作者：
Jiang Guo-Jian
中科院分区：
文献类型：
--
作者：
Shen Hui;Xu Jia-Yue;Ping Wei-Jie;He Qing-Bo;Zhang Yan;Jin Min;Jiang Guo-Jian
Bi_4Si_3O_（12）（BSO）是一种性能优良的闪烁晶体，正成为高能物理中双读出量热计的理想候选材料。本文采用改进的坩埚下降法成功地生长了高质量的BSO晶体。首次研究了它的力学和热学性能，并与著名的闪烁晶体Bi_4Ge_3 O_（12）（BGO）进行了比较。BSO晶体的维氏硬度和断裂韧性高于BGO晶体。在298 K时测得其比热、热扩散率和热导率分别为0.319 J·g-1 K-1、1.54 mm 2·s-1和3.29 W·m-1 K-1。从300到1173 K，平均热膨胀系数为7.07 × 10− 6 K −1。与BGO晶体相比，BSO晶体具有较大的比热容、热导率和较小的热膨胀系数。这些结果表明BSO晶体具有较好的力学性能和热学性能，这将有利于其实际应用。
Bi4Si3O12 (BSO) is an excellent scintillation crystal, and is becoming the desirable candidate for dual-readout calorimeters in high-energy physics. In this work, high quality BSO crystals are successfully grown by the modified Bridgman method. For the first time, its mechanical and thermal properties are investigated and compared with those of the famous scintillation crystal Bi4Ge3O12 (BGO). The Vickers hardness and fracture toughness of BSO crystal are higher than those of BGO crystal. Its specific heat, thermal diffusivity and thermal conductivity are measured to be 0.319 J·g−1K−1, 1.54 mm2·s−1 and 3.29 W·m−1K−1 at 298 K, respectively. The average thermal expansion coefficient is calculated to be 7.07 × 10−6K−1 from 300 to 1173 K. Compared with BGO crystal, BSO crystal possesses larger specific heat, thermal conductivity and smaller thermal expansion. These results indicate that BSO crystals possess better mechanical and thermal properties, which will benefit its practical applications.