Polarization Modulation in Ferroelectric Organic Field-Effect Transistors
Polarization Modulation in Ferroelectric Organic Field-Effect Transistors
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DOI：
10.1103/physrevapplied.10.014011
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发表时间：
2018-03
影响因子：
4.6
通讯作者：
A. Laudari;A. Mazza;A. Daykin;S. Khanra;K. Ghosh;F. Cummings;T. Müller;P. Miceli;S. Guha
中科院分区：
文献类型：
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作者：
A. Laudari;A. Mazza;A. Daykin;S. Khanra;K. Ghosh;F. Cummings;T. Müller;P. Miceli;S. Guha
控制铁电氧化物中的极化已经实现了金属氧化物半导体场效应晶体管（MOSFET）中的快速开关和低功率操作。目前还缺乏对极化方向旋转90度的铁电聚合物基有机场效应晶体（OFFET）性能的平行研究。本文研究了外部电极化对小分子OFFEs性能的影响。当铁电层被垂直极化时，整体晶体管性能得到增强，并且通过切换极化方向容易且可逆地控制。结果突出了进一步的设计原则，以提高在OFFEX的电荷传输。
Controlling polarization in ferroelectric oxides has enabled fast switching and low-power operation in metal-oxide-semiconductor field-effect transistors (MOSFETs). Parallel studies on the performance of ferroelectric-polymer-based organic FETs (OFETs), where the polarization direction is rotated by 90\ifmmode^\circ\else\textdegree\fi{}, are lacking. This article examines the effects of external electrical poling on the performance of small-molecule OFETs. The overall transistor properties are enhanced when the ferroelectric layer is vertically poled, and are easily and reversibly controlled by switching the polarization direction. The results highlight further design principles for improving charge transport in OFETs.