Dynamics of excitons localized by stacking disorder in GaSe.
Dynamics of excitons localized by stacking disorder in GaSe.
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GaSe 中堆积无序局域化的激子动力学。
DOI:
10.1103/physrevb.35.2509
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发表时间:
1987
期刊:
影响因子:
--
通讯作者:
Era
中科院分区:
文献类型:
--
作者:
Minami;Era
The dynamics of the excitons localized by stacking disorder in the layered compound GaSe is investigated in the picosecond time domain by measuring energy-and time-resolved luminescence spectra at 1.6 K. The observed energy relaxation rate is much slower than expected from two-dimensional kinetic-energy-loss theory. We present a simple theory of energy transfer of the localized excitons which explains satisfactorily the experimental time response of the excitons. The observed slow relaxation is interpreted in terms of one-phonon-assisted transfer of localized excitons between layers.