Research on controllable synthesis of silicon carbide whiskers and particles on graphite by chemical vapor reaction
Research on controllable synthesis of silicon carbide whiskers and particles on graphite by chemical vapor reaction
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石墨上化学气相反应可控合成碳化硅晶须和颗粒的研究
DOI：
10.1007/s10853-018-3016-7
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发表时间：
2018-10
影响因子：
4.5
通讯作者：
Jinyu Gong
中科院分区：
文献类型：
--
作者：
Ye Hua;Shuxin Bai;Hong Wan;Xingyu Chen;Ting Hu;Jinyu Gong
本文采用化学气相反应法，在不同的压力条件下，在石墨表面生长了颗粒和晶须两种形貌的碳化硅。根据这些实验发现，对不同反应压力和温度下的设计实验进行了详细的研究，并从理论上分析了影响实验的因素。结果表明，体系总压是影响碳化硅颗粒形状的主要因素。总压越高，CO的浓度越大，越容易形成碳化硅晶须。此外，温度对碳化硅的尺寸有显著影响，温度越高，碳化硅晶须的长度越短，数量越多，碳化硅颗粒的直径越大。基于这些结果，可以实现碳化硅晶须和颗粒的可控合成，符合应用要求。
In this paper, SiC with the morphologies of both particles and whiskers was grown on graphite surface by chemical vapor reaction method under different pressure conditions. According to these experimental discoveries, designed experiments with different reaction pressures and temperatures were studied in detail, and then, the influence factors were analyzed in theory. The results show that the shapes of the formed SiC are influenced mainly by the total pressure of the system. Higher total pressure is in favor of larger concentration of CO and then tends to form SiC whiskers. In addition, temperature significantly affects the size of SiC, higher temperature results in shorter length and further quantity of the SiC whiskers as well as larger diameter of the SiC particles. Based on these results, controllable synthesis of silicon carbide whiskers and particles can be realized in accordance with the requirements of application.
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DOI：
10.1016/j.ijrmhm.2011.03.005
发表时间：
2011-09-01
影响因子：
3.6
作者：
Cetinkaya, S.;Eroglu, S.
通讯作者：
Eroglu, S.
DOI：
10.1016/j.msea.2012.03.013
发表时间：
2012-05
影响因子：
6.4
作者：
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通讯作者：
H. Fan;Yawei Li;Yupeng Huang;S. Sang;Yuanbing Li;Lei Zhao
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影响因子：
4
作者：
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通讯作者：
Jian-de Zhang
影响因子：
4
作者：
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通讯作者：
Ren, ZF
影响因子：
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作者：
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通讯作者：
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