Transparent and electrical properties of Ga-doped Zn1−xCdxO films post-annealed in vacuum and nitrogen
Transparent and electrical properties of Ga-doped Zn1−xCdxO films post-annealed in vacuum and nitrogen
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DOI：
10.1007/s10854-013-1067-8
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发表时间：
2013-01
期刊：
影响因子：
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通讯作者：
L. Duan;X. R. Zhao;J. Liu;W. Geng;C. Cao;M. Cao
中科院分区：
文献类型：
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作者：
L. Duan;X. R. Zhao;J. Liu;W. Geng;C. Cao;M. Cao
采用溶胶-凝胶法制备了（Cd,Ga）共掺杂ZnO薄膜。共掺杂膜保留了ZnO的纤锌矿结构，并表现出优先的c轴取向。研究了真空和氮气退火后薄膜的透明性能和电学性能。真空退火使薄膜的透光率降低到60 ~ 70%，氮退火使薄膜的透光率提高到80 ~ 90%。载流子浓度随带隙的缩小而增加，电阻率随带隙的缩小而降低，即掺杂Cd可以通过带隙的缩小来提高掺杂ga的Zn1−xCdxO薄膜的电导率。带隙的修饰主要是由于Cd掺杂（多数）和Burstein-Moss效应（少数）。氮退火膜的电阻率比真空退火膜高一个数量级。透射率和电导率似乎是不可调和的，而它们之间的权衡可能通过不同的退火后环境来调节。
(Cd,Ga)-codoped ZnO films were prepared by sol–gel method. The codoping films retained wurtzite structure of ZnO, and showed preferentialc-axis orientation. The transparent and electrical properties of the films post-annealed in vacuum and nitrogen were investigated. The transmittances of the films were degraded to 60–70 % by vacuum annealing, but enhanced to 80–90 % by nitrogen annealing. The carrier concentration increased, while resistivity decreased with the narrowing band gap, i.e. Cd doping could increase the conductivity of the Ga-doped Zn1−xCdxO films by narrowing their band gap. The band gap modification was attributed to both Cd doping (majority) and Burstein–Moss effect (minority). The resistivity of nitrogen annealing films was one order higher than that of vacuum annealing films. It seemed that the transmittance and conductivity was irreconcilable, while the trade-off between them might be modulated by different post-annealing ambient.