EMERGING SOLID STATE TERAHERTZ ELECTRONICS
EMERGING SOLID STATE TERAHERTZ ELECTRONICS
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新兴固态太赫兹电子学
DOI：
10.1007/978-94-010-0824-2_11
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
V. Ryzhii
中科院分区：
文献类型：
--
作者：
M. Shur;V. Ryzhii
我们回顾了有望产生、检测和调制太赫兹辐射的新兴固态技术。 Gunn、IMP ATT 和 TUNNETT 二极管已实现接近 300 GHz 的工作频率。转移基板 HBT 的最高振荡频率已达到 800 GHz 的记录。谐振隧道二极管还展示了在 700 GHz 左右的频率下运行，尽管功率水平非常小。我们还讨论了应用于太赫兹频段的固态器件的新想法——从负有效质量放大器和双流不稳定性到回旋共振 MASER 和等离子体波电子学。
We review emerging solid-state technologies that have promise for generation, detection, and modulation of terahertz radiation. Gunn, IMP ATT, and TUNNETT diodes have achieved operating frequencies close to 300 GHz. Record maximum frequencies of oscillations of transferred-substrate HBTs have reached 800 GHz. Resonant Tunneling Diodes have also demonstrated operation at 700 GHz or so, albeit at very small power levels. We also discuss new ideas of solid-state devices for application in the terahertz band — from negative effective mass amplifiers and two-stream instability to cyclotron resonance MASERs and plasma wave electronics.