Submicron imaging of buried integrated circuit structures using scanning confocal electron microscopy
Submicron imaging of buried integrated circuit structures using scanning confocal electron microscopy
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DOI：
10.1063/1.1506010
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发表时间：
2002-09-09
影响因子：
4
通讯作者：
Zaluzec, NJ
中科院分区：
文献类型：
--
作者：
Frigo, SP;Levine, ZH;Zaluzec, NJ
使用扫描共聚焦电子显微镜技术收集模型集成电路元件的二维图像。对于嵌入在氧化硅电介质表面下约5 μ m的结构，测得的横向分辨率为76+/-9 nm。通过X射线发射光谱元素映射证明。对电子束的各种倾斜角度所拍摄的图像的视差分析允许确定两个布线平面之间的间距。结果表明，扫描共聚焦电子显微镜能够探测掩埋结构的分辨率，将是必要的下一代集成电路技术的检查。(C)2002年美国物理学会。
Two-dimensional images of model integrated circuit components were collected using the technique of scanning confocal electron microscopy. For structures embedded about 5 mum below the surface of a silicon oxide dielectric, a lateral resolution of 76+/-9 nm was measured. Elemental mapping via x-ray emission spectrometry is demonstrated. A parallax analysis of images taken for various tilt angles to the electron beam allowed determination of the spacing between two wiring planes. The results show that scanning confocal electron microscopy is capable of probing buried structures at resolutions that will be necessary for the inspection of next-generation integrated circuit technology. (C) 2002 American Institute of Physics.