Effect of wall charging on an oxygen plasma created in a helicon diffusion reactor used for silica deposition
Effect of wall charging on an oxygen plasma created in a helicon diffusion reactor used for silica deposition
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壁充电对用于二氧化硅沉积的螺旋扩散反应器中产生的氧等离子体的影响
DOI：
10.1116/1.579522
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
R. Boswell
中科院分区：
文献类型：
--
作者：
C. Charles;R. Boswell
在用于沉积二氧化硅薄膜的螺旋扩散反应器中，产生了射频功率为800W、气压为2mTorr的连续氧等离子体。用能量选择质谱仪和安装在源下方硅铝扩散腔壁上的朗缪尔探头表征了等离子体[离子能量分布函数(IEDF)、等离子体势、浮动势、等离子体密度]。从等离子体逃逸到腔体侧壁的O+2离子的离子扩散函数由一个能量对应于腔体内等离子体电势(≊32V)的单峰组成。这个相当高的值是绝缘壁在放电开始时的充电效应的结果，在估计到达偏置衬底的离子的能量时需要考虑到。
A continuous oxygen plasma operating at a radio frequency power of 800 W and a pressure of 2 mTorr has been created in a helicon diffusion reactor used for the deposition of silicon dioxide films. An energy selective mass spectrometer and a Langmuir probe attached to the wall of the silica covered aluminum diffusion chamber below the source have been used to characterize the plasma [ion energy distribution function (IEDF), plasma potential, floating potential, plasma density]. The IEDF of the O+2 ions escaping from the plasma to the sidewalls of the chamber consists of a single peak at an energy corresponding to the plasma potential in the chamber (≊32 V). This rather high value is a consequence of the charging effect of the insulating walls at the initiation of the discharge, and would need to be taken account of when estimating the energy of the ions arriving at a biased substrate.