Measurement of the electron-hole pair creation energy in A l 0 . 52 I n 0 . 48 P using X-ray radiation
Measurement of the electron-hole pair creation energy in A l 0 . 52 I n 0 . 48 P using X-ray radiation
复制标题
Al 0 中电子-空穴对产生能的测量。
DOI：
10.1016/j.nima.2017.10.027
复制
发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Butera S
中科院分区：
文献类型：
--
作者：
Butera S
在A10中产生电子-空穴对（ε A1 InP）所消耗的平均能量。52 I n 0.在− 20° C至100 ° C的温度范围内，使用定制的AlInP X射线光电二极管、55 Fe放射性同位素X射线源和定制的低噪声电荷敏感型电子器件进行了实验测量。ε AlInP随温度升高而线性下降，其关系式为：ε AlInP =（-0.0 0 33 eV/K± 0.0 0 0 3eV/K）T+（6.31eV ± 0.10eV）。在室温（20° C）下，ε AlInP = 5.34eV ± 0.07eV。
The average energy consumed in the generation of an electron–hole pair (ε A l I n P) in A l 0. 52 I n 0. 48 P was experimentally measured across the temperature range− 20° C to 100∘ C, using a custom AlInP X-ray-photodiode, an 55 Fe radioisotope X-ray source, and custom low-noise charge-sensitive preamplifier electronics. ε A l I n P was found to linearly decrease with increasing temperature according to the equation ε A l I n P=(-0.0033 eV/K±0.0003 eV/K) T+(6.31 eV±0.10 eV). At room temperature (20° C), ε A l I n P= 5.34 eV±0.07 eV.