The dynamic performance of SiC Schottky barrier diodes with parasitic inductances over a wide temperature range
The dynamic performance of SiC Schottky barrier diodes with parasitic inductances over a wide temperature range
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具有寄生电感的 SiC 肖特基势垒二极管在宽温度范围内的动态性能
DOI：
10.1049/cp.2012.0208
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Alatise O
中科院分区：
文献类型：
--
作者：
Alatise O
碳化硅有望取代硅作为汽车系统中的功率半导体选择，如电动汽车动力系统，其中电感负载被驱动。碳化硅肖特基势垒二极管（SBD）已成为商用产品，并且似乎是逆变器模块中续流二极管的可能候选者，其中它们与绝缘栅双极晶体管反并联放置。在-40 ° C ~ 125°C的温度范围内，研究了SiC SBD在Si IGBT电感开关电路中的开关特性。它已被证明，二极管的电压瞬态的关断特性表现出显着的振荡，延长了几微秒。其他作者已经报道过这种振铃，但在相同条件下测试的硅pin二极管中没有观察到这种振铃。在本文中，SPICE模拟表明，振铃是由于在一个串联的RLC电路的二极管电阻，耗尽电容和寄生电感引起的振荡输出电压的谐振。SiC二极管的较小串联电阻和较高耗尽电容意味着存在较少阻尼，因此存在较多振铃。
Silicon carbide is poised to replace silicon as the power semiconductor of choice in automotive systems like electric vehicle power trains where inductive loads are driven. Silicon carbide Schottky Barrier diodes (SBDs) have become commercially available and appear to be likely candidates for free-wheeling diodes in inverter modules where they are placed anti-parallel with insulated gate bipolar transistors. The switching characteristics of SiC SBDs have been investigated in inductive switching circuits with Si IGBTs over a temperature range of -40°C to 125°C. It has been shown that the diode voltage transient in the turn-off characteristics exhibited significant oscillations extending over several microseconds. This ringing, which has been reported by other authors, was not observed in silicon pin diodes tested under identical conditions. In this paper, SPICE simulations are used to show that the ringing is due to resonance in a series RLC circuit with the diode resistance, depletion capacitance and parasitic inductance causing oscillation in the output voltage. The smaller series resistance and higher depletion capacitance of the SiC diodes means that there is less damping, hence more ringing.