Negative thermal expansion in Ge-free antiperovskite manganese nitrides: Tin-doping effect
Negative thermal expansion in Ge-free antiperovskite manganese nitrides: Tin-doping effect
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DOI：
10.1063/1.2831715
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发表时间：
2008-01-07
影响因子：
4
通讯作者：
Takagi, H.
中科院分区：
文献类型：
--
作者：
Takenaka, K.;Asano, K.;Takagi, H.
反钙钛矿锰氮化物Mn（3）AN（A=Zn，Ga，etc.）通过在A上掺杂Ge作为磁转变处急剧体积变化的“弛豫剂”来实现。为了促进更广泛的应用，我们合成了不含昂贵Ge的NTE反钙钛矿。我们发现，锡加宽的体积变化，虽然不如有效的Ge。同时取代Sn的A和C的N扩展的操作温度窗口的NTE几乎一样宽的Ge掺杂的对应物。讨论了Ge或Sn引起的相位不稳定性与展宽的关系。(c)2008年美国物理研究所。
Giant negative thermal expansion (NTE) recently discovered in antiperovskite manganese nitrides Mn(3)AN (A=Zn,Ga, etc.) is achieved by doping Ge on A as "relaxant" of the sharp volume change at the magnetic transition. To promote wider applications, we synthesized NTE antiperovskites without expensive Ge. We discovered that Sn broadens the volume change, though less effective than Ge. Simultaneous substitution of Sn for A and C for N expands the operation-temperature window of NTE almost as broad as that of the Ge-doped counterpart. We discuss relation between the broadening and the phase instability caused by Ge or Sn. (c) 2008 American Institute of Physics.