Equivalent Dielectric property of hydrogenated carbon nitride film in CH4/N2 DBD plasma: Gas and Solid phase reaction
Equivalent Dielectric property of hydrogenated carbon nitride film in CH4/N2 DBD plasma: Gas and Solid phase reaction
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发表时间：
2014
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通讯作者：
A. Majumdar;Sandhan Chandra Das;B. Ghosh;Rainer;Hippler
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作者：
A. Majumdar;Sandhan Chandra Das;B. Ghosh;Rainer;Hippler
报道了在CH4/N2（1:2）介质阻挡放电（DBD）等离子体中沉积的氢化氮化碳（a-H-CxNy）薄膜的等效介电性能和化学键结构。CH4/N2 DBD等离子体的质谱显示气相中产生了几种高阶烃（a-H-CxNy，其中x的值高达9）和不同的官能团CN。x射线光电子能谱（XPS）鉴定出若干N-1s、C-1s和O-1s峰，表明膜中C- C、C=C和C- h键的形成随沉积时间不变。傅里叶变换红外光谱（FTIR）描述了沉积膜中不同官能团的存在，包括nhh - oh， C≡N, CH2, CH3， C-N基团。扫描电镜观察到薄膜表面有圆形的岛状生长。此外，我们提出了一个粗略的假设来估计薄膜在沉积过程中的等效介电常数。用阻抗分析仪测量了a-H-CxNy薄膜的介电常数，并与利萨焦氏图进行了比较。文中还指出了可能的物理原因和所得结果的重要性。
We report the equivalent dielectric property and chemical bond structure of hydrogenated carbon nitride (a-H-CxNy) film deposited in CH4/N2 (1:2) dielectric barrier discharge (DBD) plasma. Mass spectrum of CH4/N2 DBD plasma shows the several higher order hydrocarbons (a-H-CxNy, with x is up to 9), different functional CN groups produced in gas phase. Several N-1s, C-1s and O-1s peaks have been identified by x-ray photoelectron spectroscopy (XPS) and it shows that the formation of C–C, C=C, and C–H bond in the film is invariant with deposition time. Fourier transformed infrared spectroscopy (FTIR) spectra depict the presence of different functional including NH-OH, C≡N, CH2, CH3, C-N groups in the deposited film. Round shaped island growth has been observed at film surface area in scanning electron microscopy (SEM). Moreover, we proposed a crude assumption to estimate the equivalent dielectric constant of the film during the deposition process. The dielectric constant of a-H-CxNy film is measured (ex situ) by impedance analyzer and compared with the same obtained by Lissajous figure. The probable physical causes and importance of the results obtained are also pointed out.