Investigation of Thermal Annealing Process of GaN Layer on Sapphire by Molecular Dynamics
Investigation of Thermal Annealing Process of GaN Layer on Sapphire by Molecular Dynamics
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蓝宝石氮化镓层热退火过程的分子动力学研究
DOI：
10.1143/jjap.39.4400
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发表时间：
2000
影响因子：
1.5
通讯作者：
T. Maeda
中科院分区：
文献类型：
--
作者：
Takayuki Onozu;R. Miura;S. Takami;M. Kubo;A. Miyamoto;Y. Iyechika;T. Maeda
采用分子动力学（MD）方法模拟了GaN在蓝宝石（0001）衬底上的异质外延生长过程，研究了低温退火过程中GaN层的热稳定性。分子动力学模拟表明，在800 K低温下生长的GaN薄膜表面形貌和结晶度均为非晶状，且非常粗糙。在1100和1200 K的热退火MD模拟后，低温GaN层的表面原子形态得到改善，并显示出原子六方结构。蓝宝石衬底上GaN外延层的结晶度与退火温度密切相关。
Molecular dynamics (MD) calculations have been performed to simulate the heteroepitaxial growth process of GaN on sapphire (0001) substrates and the thermal stability of the low-temperature GaN layer during the annealing process has been investigated. The MD simulations indicated that the surface morphology and the crystallinity of GaN thin layers grown on sapphire at low temperature of 800 K was amorphouslike and very rough. The surface atomic morphology of the low-temperature GaN layer was improved after the thermal annealing MD simulations at 1100 and 1200 K and showed atomically hexagonal structures. The crystallinity of the GaN epitaxial layer on the sapphire (0001) substrate is found to be strongly dependent on the temperature of annealing.