Disposable Gate AlGaN/GaN High-Electron- Mobility Sensor for Trace-Level Biological Detection
Disposable Gate AlGaN/GaN High-Electron- Mobility Sensor for Trace-Level Biological Detection
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DOI：
10.1109/led.2018.2868433
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发表时间：
2018-10
影响因子：
4.9
通讯作者：
Shuai Yang;Le Gu;Xiangzhen Ding;Bin Miao;Zhiqi Gu;Lanying Yang;Jiadong Li;Dongmin Wu
中科院分区：
文献类型：
--
作者：
Shuai Yang;Le Gu;Xiangzhen Ding;Bin Miao;Zhiqi Gu;Lanying Yang;Jiadong Li;Dongmin Wu
在这封信中，我们提出了一种基于一次性栅极 (DG) AlGaN/GaN 高电子迁移率晶体管 (HEMT) 传感器的高度可靠的生物传感器。该装置的最大优点是HEMT结构和含有敏感膜的传感结构是分开的，克服了在生化环境中容易污染的缺点。 DG结构的HEMT传感器对不同浓度的前列腺特异性抗原(PSA)的添加表现出稳定、快速的响应，并且所达到的PSA检测限低至100 fg/mL。还发现 DG AlGaN/GaN HEMT 传感器表现出良好的线性度和特异性。这些结果表明，DG HEMT 传感器可被认为是一种有前途的生物传感器平台，可用于疾病诊断的实际应用。
In this letter, we propose a highly reliable biosensor based on the disposable gate (DG) AlGaN/GaN high-electron mobility transistor (HEMT) sensor. The greatest advantage of this device is that the HEMT structure and the sensing structure containing the sensitive membrane are separate, overcoming the drawback of being easily contaminated in a biochemical environment. The DG structure HEMT sensor exhibited stable and rapid response to the addition of different concentrations of the prostate-specific antigen (PSA), and the achieved limit of PSA detection was as low as 100 fg/mL. It was also found that the DG AlGaN/GaN HEMT sensor shows good linearity and specificity. These results demonstrate the DG HEMT sensor can be considered to be a promising biosensor platform for practical application in disease diagnosis.