Doping effect on carrier mobility in poly-p-phenylenesulfide
Doping effect on carrier mobility in poly-p-phenylenesulfide
复制标题
掺杂对聚对苯硫醚中载流子迁移率的影响
DOI：
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发表时间：
1985
期刊：
影响因子：
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通讯作者：
K. Yoshino
中科院分区：
文献类型：
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作者：
M. Yun;K. Yoshino
用飞行时间法研究了载流子在聚苯硫醚（PPS）中的迁移率和掺杂对载流子迁移率的影响。在未掺杂和TCNQ‐（7,7,8,8，四氰喹诺二甲烷）掺杂的PPS样品中，从激光诱导电荷信号的极性来看，空穴是主要载流子。随着TCNQ浓度的增加，空穴迁移率增加，活化能降低。
The carrier mobility in poly‐p‐phenylenesulfide (PPS) and the effect of doping are studied by a time‐of‐flight method. In both nondoped and TCNQ‐ (7,7,8,8,tetracyanoquinodimethane) doped PPS samples, holes are confirmed to be the predominant carriers from the polarity of a laser‐induced charge signal. With increasing TCNQ concentration, the hole mobility increases and its activation energy decreases.