Characterization of room temperature recrystallization kinetics in electroplated copper thin films with concurrent x-ray diffraction and electrical resistivity measurements
Characterization of room temperature recrystallization kinetics in electroplated copper thin films with concurrent x-ray diffraction and electrical resistivity measurements
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通过同时进行 X 射线衍射和电阻率测量来表征电镀铜薄膜的室温再结晶动力学
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
I. C. Noyan
中科院分区：
文献类型：
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作者：
M. Treger;C. Witt;C. Cabral;C. Murray;J. Jordan;R. Rosenberg;E. Eisenbraun;I. C. Noyan
同时在原位四探针电阻率和高分辨率同步辐射X射线衍射测量被用来表征室温再结晶在电镀铜薄膜。X射线数据用于获得转换晶粒的Cu 111和200反射的积分强度和峰宽随时间的变化。利用Johnson-Mehl-Avrami-Kolmogorov（JMAK）模型分析了积分强度和电阻率数据随时间的变化。对于111纹理和非纹理电镀铜膜，四点探针电阻率测量产生较短的转换时间比从相应的铜111反射的积分强度得到的值。此外，拟合到电阻率数据的JMAK指数明显较小。这些差异可以通过考虑电阻率和衍射信号起源的不同材料体积，以及将这些信号与演变中的微观结构的变化联系起来的物理过程来解释。基于这些问题，建议用直接结构表征技术校准电阻率分析。
Concurrent in-situ four-point probe resistivity and high resolution synchrotron x-ray diffraction measurements were used to characterize room temperature recrystallization in electroplated Cu thin films. The x-ray data were used to obtain the variation with time of the integrated intensities and the peak-breadth from the Cu 111 and 200 reflections of the transforming grains. The variation of the integrated intensity and resistivity data with time was analyzed using the Johnson-Mehl-Avrami-Kolmogorov (JMAK) model. For both 111-textured and non-textured electroplated Cu films, four-point probe resistivity measurements yielded shorter transformation times than the values obtained from the integrated intensities of the corresponding Cu 111 reflections. In addition, the JMAK exponents fitted to the resistivity data were significantly smaller. These discrepancies could be explained by considering the different material volumes from which resistivity and diffraction signals originated, and the physical processes which linked these signals to the changes in the evolving microstructure. Based on these issues, calibration of the resistivity analysis with direct structural characterization techniques is recommended.