Molecular‐beam epitaxy growth of ZnSe using a cracked selenium source
Molecular‐beam epitaxy growth of ZnSe using a cracked selenium source
复制标题
使用裂解硒源进行 ZnSe 分子束外延生长
DOI：
--
复制
发表时间：
1990
期刊：
影响因子：
--
通讯作者：
J. E. Potts
中科院分区：
文献类型：
--
作者：
H. Cheng;J. M. Depuydt;M. Haase;J. E. Potts
双炉裂解炉已被用于生产由较小的硒分子种类组成的助熔剂，用于在（100）GaAs衬底上进行ZnSe的分子束外延（MBE）生长。对来自传统泻流室和裂解炉的通量的质谱分析表明，在它们的质谱中大硒分子Sen（n>2）的数量存在显著差异。发现这种新的硒源与GaAs及其氧化物反应，因此其与衬底的反应降低了通过热处理解吸氧化物层的有效性。使用破裂的硒源，在与MBE系统相连的单独超高真空（UHV）室中脱附的GaAs衬底上生长了无意掺杂的ZnSe薄膜。这些未掺杂的层在室温下具有高电阻，并且具有由自由激子的复合发射主导的低温光致发光光谱，与使用未开裂的硒源生长的最佳层相当。
A double‐oven cracking furnace has been used to produce a flux composed of smaller selenium molecular species for the molecular‐beam epitaxy (MBE) growth of ZnSe on (100) GaAs substrates. Mass spectrometric analysis of fluxes from a conventional effusion cell and the cracking oven showed a significant difference in the number of large selenium molecules Sen (n>2) in their mass spectra. This new selenium source was found to be reactive with GaAs and its oxides, therefore its reaction with the substrate reduced the effectiveness in desorbing the oxide layer by heat treatment. Using the cracked selenium source, unintentionally doped ZnSe films have been grown on GaAs substrates desorbed in a separate ultrahigh vacuum (UHV) chamber linked to the MBE system. These undoped layers were highly resistive at room temperature and had low‐temperature photoluminescence spectra dominated by emission from the recombination of free excitons, comparable to the best layers grown using an uncracked selenium source.