Tunneling magnetoresistance sensors for high resolutive particle detection
Tunneling magnetoresistance sensors for high resolutive particle detection
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DOI：
10.1063/1.3179241
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发表时间：
2009-07-13
影响因子：
4
通讯作者：
Huetten, A.
中科院分区：
文献类型：
--
作者：
Albon, C.;Weddemann, A.;Huetten, A.
采用以氧化镁为绝缘层的隧道磁阻传感器阵列对磁微珠进行检测。对于单头检测，使用轴长为400和100 nm的椭圆形传感器。由于高形状各向异性，传感器信号在-500和500欧安之间的磁场范围内的线性响应可以被报道。通过对磁微珠进行静态检测测量，可以观察到与磁微珠相对于传感器的位置相关的独特信号形状。实验数据与在三层模型上进行的微磁模拟进行了比较。
Arrays of tunnel magnetoresistance sensors based on MgO as insulating layer are employed to detect magnetic microbeads. For single bead detection, elliptically shaped sensors of axis lengths of 400 and 100 nm are used. Due to high shape anisotropy a linear response of the sensor signal in a magnetic field range between -500 and 500 Oe can be reported. By performing static detection measurements of magnetic microbeads, a distinct signal shape correlated with the position of beads in respect to the sensor can be observed. The experimental data are compared to micromagnetic simulations carried out on a trilayer model.