Observations of plane-matching grain boundaries by electron channelling patterns
Observations of plane-matching grain boundaries by electron channelling patterns
复制标题
通过电子通道模式观察平面匹配晶界
DOI：
10.1080/01418618308243114
复制
发表时间：
1983
影响因子：
1.6
通讯作者：
Tadao Watanabe
中科院分区：
文献类型：
--
作者：
Tadao Watanabe
用电子沟道花样（ECP）观察了Fe-3% Si合金再结晶组织的{110}面匹配晶界。结果表明，{110}面匹配晶界对合金再结晶过程中的晶粒长大起着重要作用。在平行于{110}面的方向上，表面靠近{100}的晶粒通过{110}面匹配晶界的迁移而优先生长，而表面靠近{111}的基体晶粒则被牺牲。发现了{110}面匹配晶界迁移的各向异性，并提出了解释晶界迁移各向异性的台阶机制。
Abstract Observations of {110} plane-matching grain boundaries have been made by electron channelling patterns (ECPs) for the recrystallization structure of an Fe-3% Si alloy. It has been found that the {110} plane-matching grain boundary plays an important role in the grain growth during recrystallization of the alloy. The grains whose surfaces were near {100} preferentially grew by the migration of a {110} plane-matching grain boundary at the expense of the matrix grain whose surface was near {111} in the direction parallel to {110} plane. The anisotropy of the migration of the {110} plane-matching grain boundaries has been found. A step mechanism is suggested to explain the observed anisotropy of grain boundary migration.