Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy: Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth
Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy: Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth
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DOI：
10.1143/apex.2.066502
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发表时间：
2009-05
影响因子：
2.3
通讯作者：
T. Hashimoto;C. Yoshimoto;T. Hosoi;T. Shimura;Heiji Watanabe
中科院分区：
文献类型：
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作者：
T. Hashimoto;C. Yoshimoto;T. Hosoi;T. Shimura;Heiji Watanabe
采用横向液相外延(LPE)方法制备了局域Ge-on-绝缘体(GOI)结构。我们研究了决定与液态Ge界面能量的微坩埚尺寸和底层绝缘体材料的影响。结果表明，在LPE生长过程中，选择窄坩埚和控制界面能抑制了Ge的聚集和无规成核。通过使用替代的La_2O_3高k电介质代替传统的SiO_2绝缘体，在1µm宽的微坩埚内制备了44微米长的单晶Ge丝。并从界面能和LPE生长过程中的随机成核两个方面对改进的机理进行了讨论。
Local Ge-on-insulator (GOI) structures were fabricated by means of lateral liquid-phase epitaxy (LPE). We investigated both effects of microcrucible size and underlying insulator materials that determine the interface energy with liquid Ge. We demonstrated that choosing narrow crucibles and controlling interface energy suppresses undesirable Ge aggregation and random nucleation during LPE growth. By utilizing alternative La2O3 high-k dielectrics instead of conventional SiO2 insulators, single-crystal 44-µm-long Ge wires were fabricated within 1-µm-wide microcrucibles. The improved mechanism is also discussed in terms of interface energy and random nucleation during LPE growth.