CMOS resistive fuses for image smoothing and segmentation

CMOS resistive fuses for image smoothing and segmentation
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用于图像平滑和分割的 CMOS 电阻保险丝

DOI:
10.1109/4.126542
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发表时间:
1992
影响因子:
5.4
通讯作者:
J. Wyatt
J. Wyatt
中科院分区:
工程技术1区
文献类型:
--
作者:
P. Yu;S. Decker;Hae;C. Sodini;J. Wyatt

文献摘要

被引文献

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描述了一种称为电阻熔断器的二端非线性元件。说明了它在图像平滑和分割中的应用。两种类型的CMOS电阻熔丝的设计,制造和测试。第一种实现采用四个耗尽型NMOS和PMOS晶体管,占用最小面积为30 μ m*38 μ m。第二个实现使用7或11个标准的增强型晶体管上的面积为75 μ m*100 μ m或更少。个别的连续熔丝电路已被制造和测试,其功能已被证明。还在标准CMOS工艺中制造了使用11晶体管实现的35个电阻熔丝的一维网络。实验结果表明,该网络能够平滑图像强度的微小变化,同时保持物体的边缘。>
A two-terminal nonlinear element called a resistive fuse is described. Its application in image smoothing and segmentation is explained. Two types of CMOS resistive fuses were designed, fabricated, and tested. The first implementation employs four depletion-mode NMOS and PMOS transistors, occupying a minimum area of 30 mu m*38 mu m. The second implementation uses seven or 11 standard enhancement-mode transistors on an area of 75 mu m*100 mu m or less. Individual resistive-fuse circuits have been fabricated and tested and their functionality has been demonstrated. A one-dimensional network of 35 resistive fuses using the 11-transistor implementation was also fabricated in a standard CMOS process. Experimental results indicate that the network is capable of smoothing out small variations in image intensity while preserving the edges of objects. >