High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET
High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET
复制标题
高均匀性、高漏极电流密度增强型AlGaN/GaN栅极分离槽HFET
DOI：
10.1109/jeds.2017.2778087
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发表时间：
2018
影响因子：
2.3
通讯作者：
Shaobo Dun
中科院分区：
文献类型：
--
作者：
Yuangang Wang;Hongyu Guo;Yulong Fang;Zhihong Feng;Shujun Cai;Yuanjie Lv;Xingye Zhou;Jiayun Yin;Tingting Han;Guodong Gu;Xubo Song;Xin Tan;Shaobo Dun
本文报道了一种新型的E型AlGaN/GaN栅隔离槽异质结场效应晶体管（GSG HFET）。通过改变栅极电压来控制电流的通断，从而调节双栅极之间的水平能带。GSG HFET的阈值电压为0.23 V，漏电流密度为851 mA/mm。与所提出的耗尽型器件相比，GSG HFET的最大漏极电流略有下降（约7%）。值得注意的是，阈值电压对蚀刻时间不太敏感。在5 ~ 9 min的宽刻蚀时间范围内，器件的阈值电压均匀性达到0.23V。
In this paper, we report on a novel E-mode AlGaN/GaN gates-seperating groove heterostructure field-effect transistor (GSG HFET). The current turn-on/off is controlled by changing gate voltage to regulate the horizontal energy band between the double gates. A threshold voltage of 0.23 V and a high drain current density of 851 mA/mm are obtained in GSG HFET. Compared with the proposed depletion-mode device, the maximum drain current of the GSG HFET deceases slightly (about 7%). It is noteworthy that the threshold voltage is less sensitive to the etching time. The devices show high-uniformity threshold voltage of 0.23 V within wide etching time range from 5 to 9 min.