In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy
In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy
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DOI：
10.1007/s11664-015-3913-3
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发表时间：
2015-09-01
影响因子：
2.1
通讯作者：
Sivananthan, S.
中科院分区：
文献类型：
--
作者：
Farrell, S.;Barnes, T.;Sivananthan, S.
吸收层的p型掺杂一直是CdTe太阳能电池的重大挑战。在这项工作中，我们报告了原位砷掺杂的分子束外延（MBE）生长在Si（211）上的CdTe和使用镉超压，以提高纳入。当生长碲化镉：作为没有镉超压，极高的作为通量需要实现显着量的砷掺入。通过在生长过程中提供Cd通量，As掺入增加了一个数量级。通过在生长过程中引入Cd超压，我们获得了As掺杂浓度为。在快速热退火炉中对这些薄膜进行活化退火，得到净载流子浓度接近5 × 10（16）cm（-3）的p型层。
p-Type doping of the absorbed layer has been a significant challenge for CdTe solar cells. In this work, we report on in situ arsenic doping of molecular beam epitaxy (MBE) CdTe grown on Si(211) and the use of a cadmium overpressure to enhance incorporation. When growing CdTe:As without a Cd overpressure, extremely high As fluxes are required to achieve noticeable amounts of arsenic incorporation. By supplying a Cd flux during growth, the As incorporation increases by an order of magnitude. By including a Cd overpressure during growth, we have obtained single-crystal CdTe:As films with As incorporation concentration of . An activation anneal was performed on these films in a rapid thermal annealing furnace, resulting in p-type layers with net carrier concentration of similar to 5 x 10(16) cm(-3).