Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells
Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells
复制标题
铟含量对InGaN/GaN多量子阱太阳能电池无意本底掺杂和器件性能的影响
DOI：
10.1109/jphotov.2017.2699199
复制
发表时间：
2017
影响因子：
3
通讯作者：
Li Mo
中科院分区：
文献类型：
--
作者：
Liu Wei;Zhao Degang;Jiang Desheng;Chen Ping;Shi Dongping;Liu Zongshun;Zhu Jianjun;Yang Jing;Li Xiang;Liang Feng;Liu Shuangtao;Xing Yao;Long Heng;Li Mo
实验研究了铟组分对InGaN/GaN多量子阱（MQW）太阳电池光伏性能的影响。采用金属有机化学气相沉积法生长了三种不同In含量的多量子阱结构，并将其制作成太阳能电池器件。In含量较低的太阳能电池表现出较强的光伏响应，这可能归因于InGaN阱层中较小的压电场和MQW有源区较好的材料质量。此外，基于电容-电压测量的表观载流子浓度的分布可以确定，我们发现，在更高的In含量的太阳能电池中的背景电子浓度在无意掺杂的InGaN量子阱更高。因此，有源区的有效体积或耗尽区的宽度可以在零偏压下变得更小，并且相应地InGaN有源层的光吸收减少。这可能是由于增加的氮空位相关的缺陷，这是更容易诱导到富In的InGaN合金作为浅施主的来源。
We experimentally investigate the influence of indium composition on the photovoltaic performance of InGaN/GaN multiple-quantum-well (MQW) solar cells. Three MQW structures with different In content are grown via metal-organic chemical vapor deposition, and then fabricated into solar cell devices. The solar cells with lower In content show stronger photovoltaic response, which may be ascribed to both smaller piezoelectric fields in InGaN well layers and better material quality of MQW active region. In addition, based on the capacitance–voltage measurements by which the profiles of apparent carrier concentration can be determined, we find that in the higher-In-content solar cells the background electron concentration in unintentionally doped InGaN QWs is higher. Consequently, the effective volume of active region, or the width of depletion region, may become smaller at zero bias and correspondingly the light absorption by InGaN active layers is reduced. This may be attributed to the increased nitrogen vacancy-related defects which are easier induced into In-rich InGaN alloys as a source of shallow donors.