A nonlinear impulse sampler for detection of picosecond pulses in 90 nm SiGe BiCMOS
A nonlinear impulse sampler for detection of picosecond pulses in 90 nm SiGe BiCMOS
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用于检测 90 nm SiGe BiCMOS 中皮秒脉冲的非线性脉冲采样器
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
A. Babakhani
中科院分区：
文献类型：
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作者：
Himanshu Aggrawal;A. Babakhani
本文提出了一种新型的非线性脉冲采样器。该架构采用基于超快在线传输的感应峰值技术，在几皮秒内开启高速采样双极晶体管。该芯片采用IBM 9HP BiCMOS工艺技术制造，占地面积为1.02 mm2。该芯片的功耗为105兆瓦。
In this paper, a novel nonlinear impulse sampler is presented. The architecture uses an ultrafast transmissionline based inductive peaking technique to turn on a high-speed sampling bipolar transistor for a few picoseconds. It is shown that the sampler can detect impulses as short as 100 ps. The chip is fabricated in IBM 9HP BiCMOS process technology and occupies an area of 1.02 mm2. The power consumption of the chip is 105 mW.