Current noise in barrier photoconducting devices. I. Theory.
Current noise in barrier photoconducting devices. I. Theory.
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DOI：
10.1103/physrevb.49.7592
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发表时间：
1994-03
期刊：
影响因子：
--
通讯作者：
Carbone;Mazzetti
中科院分区：
文献类型：
--
作者：
Carbone;Mazzetti
光电导器件中的电流噪声的理论，发展的基础上的一个大的一套测量有关的行为的光电导性，光响应性，和噪声作为光强度和波长的函数，在CdS基光电导体，提出。该理论是基于一个势垒型光电导模型和体现，在一个单一的一般表达式的噪声功率谱，由于产生的复合和闪烁噪声（本征噪声），以及控制电子注入到导带的光电导材料（光致噪声）的势垒的波动所产生的噪声的贡献。根据该模型，该势垒的高度取决于光诱导的正静电荷（电离的深施主中心或陷阱空穴）和由于注入电子而产生的负空间电荷之间的平衡效应。电离中心或俘获空穴的数量的波动引起势垒的波动，从而引起器件电导的波动。
A theory of current noise in photoconducting devices, developed on the basis of a large set of measurements concerning the behavior of photoconductivity, photoresponsivity, and noise as a function of light intensity and wavelength in CdS-based photoconductors, is presented. The theory is based on a barrier-type photoconduction model and embodies, in a single general expression of the noise power spectrum, the contributions due to the generation recombination and to the flicker noise (intrinsic noise) as well as to the noise generated by the fluctuation of the potential barrier that controls the electron injection from the metal electrode into the conduction band of the photoconducting material (photoinduced noise). According to the model, the height of this barrier depends on a balance effect between the light-induced positive static charge (ionized deep donor centers or trapped holes) and the negative space charge due to the injected electrons. The fluctuation of the number of ionized centers or trapped holes causes a fluctuation of the potential barrier and thus of the conductance of the device.