Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates
Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates
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DOI：
10.1109/lpt.2004.839012
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发表时间：
2005-02-01
影响因子：
2.6
通讯作者：
Fang, JS
中科院分区：
文献类型：
--
作者：
Wuu, DS;Wang, WK;Fang, JS
在c面图案化蓝宝石衬底（PSS）上制备了峰值发射波长约为410 nm的近紫外氮化物基发光二极管（LED）。结果发现，PSS LED的电致发光强度比传统LED的电致发光强度大63%。对于一个典型的灯形PSS LED工作在20 mA的正向电流，输出功率和外量子效率估计为10.4 mW和14.1%，分别。光强度的改善可以归因于使用PSS的水平方向上的穿线位错的减少和光提取效率的增加。
Near-ultraviolet nitride-based light-emitting diodes (LEDs) with peak emission wavelengths around 410 nm were fabricated onto c-face patterned sapphire substrates (PSS). It was found that the electroluminescence intensity of the PSS LED shown 63% larger than that of the conventional LED. For a typical lamp-form PSS LED operating at a forward current of 20 mA, the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The improvement in the light intensity could be attributed to the decrease of threading dislocations and the increase of light extraction efficiency in the horizontal direction using a PSS.