Intrinsic and extrinsic antiferromagnetic damping in NiO
Intrinsic and extrinsic antiferromagnetic damping in NiO
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DOI：
10.1103/physrevmaterials.3.051402
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发表时间：
2019-05-09
影响因子：
3.4
通讯作者：
Ono, Teruo
中科院分区：
文献类型：
--
作者：
Moriyama, Takahiro;Hayashi, Kensuke;Ono, Teruo
在反铁磁自旋电子学中，反铁磁自旋的操纵是一个核心技术挑战，了解其动态特性，特别是太赫兹自旋动力学和磁阻尼是很重要的。在这里，我们通过宽带太赫兹光谱深入研究了NiO中的反铁磁自旋动力学，发现单晶和多晶NiO的阻尼常数α分别= 5.0 +/- 0.4 x 10（-4）和7.4 +/- 0.4 x 10（-4）的显著差异，表明存在强大的外部贡献，如双磁子散射。我们的研究结果揭示了反铁磁耗散动力学的机制，并为开发反铁磁和太赫兹自旋电子学器件提供了重要的见解。
In antiferromagnetic spintronics where manipulation of the antiferromagnetic spins is a central technological challenge, it is important to understand the dynamic properties, especially their THz spin dynamics and the magnetic damping. Here, we investigate thoroughly the antiferromagnetic spin dynamics in NiO by broadband THz spectroscopy and find the remarkable difference in the damping constants alpha = 5.0 +/- 0.4 x 10(-4) and 7.4 +/- 0.4 x 10(-4), respectively, for mono- and polycrystalline NiO, indicating the existence of strong extrinsic contributions to the damping, such as two-magnon scattering. Our results shed light on the mechanism of the antiferromagnetic dissipative dynamics and give important insights for developing antiferromagnetic and THz spintronics devices.