Effect of optical spin injection on ferromagnetically coupled Mn spins in the III-V magnetic alloy semiconductor (Ga,Mn)As.
Effect of optical spin injection on ferromagnetically coupled Mn spins in the III-V magnetic alloy semiconductor (Ga,Mn)As.
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DOI：
10.1103/physrevlett.88.137202
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发表时间：
2002-03
影响因子：
8.6
通讯作者：
A. Oiwa;Y. Mitsumori;R. Moriya;T. Słupinski;H. Munekata
中科院分区：
文献类型：
--
作者：
A. Oiwa;Y. Mitsumori;R. Moriya;T. Słupinski;H. Munekata
我们报告了铁磁 (Ga,Mn)As 薄膜中新型光致磁化。光学产生的自旋极化空穴改变了铁磁耦合的Mn自旋的方向，并引起磁化强度的巨大变化，在不施加磁场的情况下达到饱和磁化强度的15%。光致磁化后也发现了记忆效应。观察到的结果表明，少量的非平衡载流子自旋可能通过 p-d 交换相互作用引起 Mn 自旋的集体旋转。
We report on the new type of photoinduced magnetization in ferromagnetic (Ga,Mn)As thin films. Optically generated spin-polarized holes change the orientation of ferromagnetically coupled Mn spins and cause a large change in magnetization, being 15% of the saturation magnetization, without the application of a magnetic field. The memorization effect has also been found as a trace after the photoinduced magnetization. The observed results suggest that a small amount of nonequilibrium carrier spins can cause collective rotation of Mn spins presumably through the p-d exchange interaction.