Photoassisted impedance spectroscopy for quantum dot solar cells
Photoassisted impedance spectroscopy for quantum dot solar cells
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DOI：
10.7567/jjap.55.04es11
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发表时间：
2016-03
影响因子：
1.5
通讯作者：
T. Hoshii;S. Naitoh;Y. Okada
中科院分区：
文献类型：
--
作者：
T. Hoshii;S. Naitoh;Y. Okada
在本研究中，评估了光照射对量子点太阳能电池(QDSCs)阻抗的影响。在1070 nm LED照射下，QDSCs通过量子态的光激发和热逃逸共同产生电流，并表现出电导的增加。另一方面，1550 nm的LED辐照增加了掺硅QDSCs的电导，尽管电流没有被提取。这一结果可以用Si掺杂引起的量子点的态填充来解释。此外，还估算了载流子的产生效率，这意味着光助阻抗谱有可能被用于评估中间波段太阳能电池。
In this study, the photoirradiation effect on the impedance of quantum dot solar cells (QDSCs) is evaluated. QDSCs under 1070 nm LED irradiation show current generation owing to the combination of photoexcitation and thermal escape via the QD state and exhibit an increase in conductance. On the other hand, 1550 nm LED irradiation increases the conductance of QDSCs with Si doping, although the current is not extracted. This result can be explained by the state filling of QDs by Si doping. Furthermore, the carrier generation efficiency is estimated, which implies that photoassisted impedance spectroscopy can potentially be used to evaluate intermediate-band solar cells.